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| AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L is a Green Product ordering option. AO8820 and AO8820L are electrically identical. A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33m (VGS = -10V) RDS(ON) < 56m (VGS = -4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.52V@3A D K SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current B A MOSFET -30 20 -8 -6.6 -40 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A C B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 3 2 -55 to 150 Typ 24 54 21 36 67 25 30 5 3.5 30 3 2 -55 to 150 Max 40 75 30 40 75 30 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State C/W Alpha & Omega Semiconductor, Ltd. AO4707 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-8A TJ=125C -1.2 40 24.5 33 41 14.5 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.4 VGS=-10V, VDS=-15V, ID=-8A 9.3 2.7 4.9 7.1 VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/s 3.4 18.9 8.4 21.5 12.5 0.48 0.07 4.2 15 120 0.52 0.15 20 60 pF mA 56 33 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s IF=3.0A VR=24V VR=24V, TJ=125C VR=24V, TJ=150C VR=15V SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT Maximum reverse leakage current Junction Capacitance A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4707 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (m) 50 40 30 20 10 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C -IS (A) 125C ID=-7.5A VGS=-10V Normalized On-Resistance 1.60 ID=-7.5A VGS=-4.5V 1.40 VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 30 25 20 -ID(A) 15 10 5 125C 25C VDS=-5V -4V 1.20 VGS=-4.5V 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AO4707 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-8A Capacitance (pF) 1250 1000 750 500 Coss 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 TJ(Max)=150C, T A=25C 40 10s 100s 30 Power (W) TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1ms 10ms 20 1.0 1s 10s DC 10 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. AO4707 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 1 IF (Amps) 600 500 400 300 200 100 0.001 0.0 0.2 0.4 0.6 0.8 VF (Volts) Figure 12: Schottky Forward Characteristics 0 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0 5 f = 1MHz 0.1 25C 0.01 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=5A 1.0E-01 1.0E-02 1.0E-03 VR=24V 1.0E-04 1.0E-05 1.0E-06 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature IF=3A Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Leakage Current (A) VF (Volts) 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Alpha & Omega Semiconductor, Ltd. |
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